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Freescale Semiconductor Technical Data
Document Number: MRF282 Rev. 15, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. * Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts PEP Power Gain -- 10.5 dB Efficiency -- 28% Intermodulation Distortion -- - 31 dBc * Specified Single - Tone Performance @ 2000 MHz, 26 Volts Output Power -- 10 Watts CW Power Gain -- 9.5 dB Efficiency -- 35% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * RoHS Compliant * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
MRF282SR1 MRF282ZR1
2000 MHz, 10 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 458B - 03, STYLE 1 NI - 200S MRF282SR1
CASE 458C - 03, STYLE 1 NI - 200Z MRF282ZR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 20 60 0.34 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 4.2 Unit C/W
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 1.0 Vdc Adc Adc Symbol Min Typ Max Unit
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF282SR1 MRF282ZR1 1
RF Device Data Freescale Semiconductor
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 Adc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.5 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Gps 10.5 11.5 -- dB Ciss Coss Crss -- -- -- 15 8.0 0.45 -- -- -- pF pF pF VGS(th) VDS(on) VGS(q) 2.0 -- 3.0 3.0 0.4 4.0 4.0 0.6 5.0 Vdc Vdc Vdc Symbol Min Typ Max Unit
28
--
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 14
-9
dB
Gps
10.5
11.5
--
dB
28
--
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 14
-9
dB
Gps
9.5 35
11.5 40
-- --
dB %
MRF282SR1 MRF282ZR1 2 RF Device Data Freescale Semiconductor
R2 VGG + C3 R1 B1 C4
R3 R4 B2 C5 Z6 C7 C8 Z12 C10 C11 C13
R5 B3 B4 C16 + C18 VDD
RF INPUT
Z5 Z1 Z2 C1 Z3 C2 C6 Z4 Z7 Z8 C9 DUT Z9 Z10
Z11 Z13 Z14 C15 C12 C14 Z15 Z16 C17
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.491 x 0.080 Microstrip 0.253 x 0.080 Microstrip 0.632 x 0.080 Microstrip 0.567 x 0.080 Microstrip 1.139 x 0.055 Microstrip 0.236 x 0.055 Microstrip 0.180 x 0.325 Microstrip 0.301 x 0.325 Microstrip 0.439 x 0.325 Microstrip 0.055 x 0.325 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material
0.636 x 0.055 Microstrip 0.303 x 0.055 Microstrip 0.463 x 0.080 Microstrip 0.105 x 0.080 Microstrip 0.452 0.085 x 0.080 Microstrip 0.910 0.085 x 0.080 Microstrip 0.030 Glass Teflon(R), 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300 - 55 - 22, r = 2.55
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators B1, B4 B2, B3 C1, C2, C9 C3 C4, C5, C13, C16 C6 C7 C8 C10 C11 C12 C14 C15 C17 C18 R1 R2, R5 R3, R4 WS1, WS2 Description Surface Mount Ferrite Beads, 0.120 x 0.333 x 0.100, Fair Rite #2743019446 Surface Mount Ferrite Beads, 0.120 x 0.170 x 0.100, Fair Rite #2743029446 0.8 - 8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 200 pF Chip Capacitor, ATC #100B201JCA500X 18 pF Chip Capacitor, ATC #100B180KP500X 39 pF Chip Capacitor, ATC #100B390JCA500X 27 pF Chip Capacitor, ATC #100B270JCA500X 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL 0.5 pF Chip Capacitor, ATC #100B0R5BCA500X 15 pF Chip Capacitor, ATC #100B150JCA500X 0.1 pF Chip Capacitor, ATC #100B0R1BCA500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT 91 W, 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B910JT Beryllium Copper Wear Blocks 0.010 x 0.235 x 0.135 NOM Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni - Spectra # 3052 - 1648 - 10 4 - 40 Ph Head Screws, 0.125 Long 4 - 40 Ph Head Screws, 0.188 Long 4 - 40 Ph Head Screws, 0.312 Long 4 - 40 Ph Rec. Hd. Screws, 0.438 Long RF Circuit Board 3 x 5 Copper Clad PCB, Glass Teflon(R)
MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 3
R1 R2
C4 B2
C5
C7 C8
C13 R5 C10 C11 B4 B3 C16
C18
B1
R3 R4
C3 C6 C15
WS1
WS2
C14 C1 C2 C9
C17
C12
MRF282 Rev - 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
MRF282SR1 MRF282ZR1 4 RF Device Data Freescale Semiconductor
R1
R2
R3
R4
R5
R6
VGG
+ C1
B1
C4
B2
C7
B3
C5
C8
C14
C11
B5 C10
B4 C13
B6
+ C16
VDD
RF INPUT Z1
L1 Z2 C2
L2 Z3 Z4 C3 C6 Z5
L3 Z6
L4 DUT Z7 C9 C12 C15 Z8 Z9 Z10
L5 Z11 C17
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.122 x 0.08 Microstrip 0.650 x 0.08 Microstrip 0.160 x 0.08 Microstrip 0.030 x 0.08 Microstrip 0.045 x 0.08 Microstrip 0.291 x 0.08 Microstrip 0.483 x 0.330 Microstrip
Z8 Z9 Z10 Z11 Raw Board Material
0.414 x 0.330 Microstrip 0.392 x 0.08 Microstrip 0.070 x 0.08 Microstrip 1.110 x 0.08 Microstrip 0.030 Glass Teflon(R), 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300 - 55 - 22, r = 2.55
Figure 3. 1810 - 1880 MHz Broadband Test Circuit Schematic
Table 5. 1810 - 1880 MHz Broadband Test Circuit Component Designations and Values
Designators B1, B2, B3, B4, B5, B6 C1, C16 C2, C9, C12, C17 C3 C4, C13 C5, C14 C6, C8, C11, C15 C7, C10 L1 L2 L3, L4 L5 R1, R2, R3 R4, R5, R6 W1, W2 Description Surface Mount Ferrite Beads, 0.120 x 0.170 x 0.100, Fair Rite #2743029446 470 F, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL 0.8 - 8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL 0.1 F Chip Capacitors, Kemet #CDR33BX104AKWS 100 pF Chip Capacitors, ATC #100B101JCA500X 12 pF Chip Capacitors, ATC #100B120JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA50X 3 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.053 Long, 6.0 nH 5 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.091 Long, 15 nH 9 Turns, 26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH 4 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.078 Long, 10 nH 12 , 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT 0.08 x 0.13 Resistors, Garrett Instruments #RM73B2B120JT Beryllium Copper 0.010 x 0.110 x 0.210
MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 5
VSUPPLY + R1 R2 R3 R4 R6 + C2 C4 C5 C6 R8 C8 C9 Q1 Q2 B1 C13 C14 R9 C16 R10 C18 C20 B2 B3 VDD R5 C1 VDD
R7
+
L2 RF OUTPUT Z5 Z6 Z7 C17 Z8 Z9 C19
RF INPUT
L1 Z1 C3 Z2 C7 Z3 C10 Z4
DUT
C11
C12
C15
Z1 Z2 Z3 Z4 Z5 Z6
0.624 x 0.08 Microstrip 0.725 x 0.08 Microstrip 0.455 x 0.08 Microstrip 0.530 x 0.330 Microstrip 0.280 x 0.330 Microstrip 0.212 x 0.330 Microstrip
Z7 Z8 Z9 Raw Board Material
0.408 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 0.030 Glass Teflon(R), 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300 - 55 - 22, r = 2.55
Figure 4. Class A Broadband Test Circuit Schematic Table 6. Class A Broadband Test Circuit Component Designations and Values
Designators B1, B2, B3 C1, C20 C2 C3, C10, C15 C4, C16 C5 C6, C7, C9, C14, C17 C8, C13 C11, C12 C18 C19 L1 L2 Q1 Q2 R1 R2 R3 R4, R6, R7 R5 R8, R9, R10 Input/Output Description Ferrite Beads, Ferroxcube #56 - 590 - 65 - 3B 470 F, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L 0.01 F Chip Capacitor, ATC #100B103JCA50X 0.6 - 4.5 pF Variable Capacitors, Johanson #27271SL 0.02 F Chip Capacitors, ATC #100B203JCA50X 100 F, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256 12 pF Chip Capacitors, ATC #100B120JCA500X 51 pF Chip Capacitors, ATC #100B510JCA500X 0.3 pF Chip Capacitors, ATC #100B0R3CCA500X 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS 0.4 - 2.5 pF Variable Capacitor, Johanson #27285 8 Turns, 0.042 ID, 24 AWG, Enamel 9 Turns, 0.046 ID, 26 AWG, Enamel NPN, 15 W, Bipolar Transistor, MJD310 PNP, 15 W, Bipolar Transistor, MJD320 200 , 1/4 W Axial Resistor 1.0 k, 1/2 W Potentiometer, Bourns 13 k, 1/4 W Axial Resistor 390 , 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT 1.0 , 10 W 1% Resistor, Dale #RE65G1R00 12 , 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT Type N Flange Mount RF55 - 22 Connectors, Omni - Spectra
MRF282SR1 MRF282ZR1 6 RF Device Data Freescale Semiconductor
Zo = 5 f = 2000 MHz Zin f = 1800 MHz f = 2000 MHz ZOL*
f = 1800 MHz
VDD = 26 V, IDQ = 75 mA, Pout = 10 W (PEP) f MHz 1800 1860 1900 1960 2000 Zin Zin 2.1 + j1.0 2.05 + j1.15 2.0 + j1.2 1.9 + j1.4 1.85 + j1.6 ZOL* 3.8 - j0.15 3.77 - j0.13 3.75 - j0.1 3.65 + j0.1 3.55 + j0.2
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 5. Series Equivalent Input and Output Impedence
MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 7
NOTES
MRF282SR1 MRF282ZR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 9
NOTES
MRF282SR1 MRF282ZR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
ccc
M
TA M
1
M
B
M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 --- 0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 --- 0.508 0.254 REF 0.381 REF
(INSULATOR)
R
(LID)
ccc
M
TA
M
B
M
4X
Z
DIM A B C D E F H K M N R S Z bbb ccc
2X
K S (INSULATOR) ccc M T A B
2 2X
M
B
M
D bbb
M M
3
TA B
M
M
B
M
(FLANGE)
B
ccc
M
TA
(LID)
N
E
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
F C
H A
(FLANGE)
A
T
SEATING PLANE
CASE 458B - 03 ISSUE E NI - 200S MRF282SR1
ccc
M
TA M
M
B
M
F R
(LID)
(INSULATOR) 4X
Y
Z
1
ccc
M
TA
M
B
M 3
NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 --- R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 --- R .508 0.254 REF 0.381 REF
S
(INSULATOR)
ccc
M
TA
M
B
(FLANGE) M
B
2 2X
B
2X
D
M
K
bbb
TA
M
B
M
ccc
M
TA
(LID)
M
B
M
N
DIM A B C D E F H K M N R S Y Z bbb ccc
H C
E
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A
(FLANGE)
A
T
SEATING PLANE
CASE 458C - 03 ISSUE E NI - 200Z MRF282ZR1
MRF282SR1 MRF282ZR1 RF Device Data Freescale Semiconductor 11
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MRF282SR1 MRF282ZR1
Rev. 12 15, 5/2006 Document Number: MRF282
RF Device Data Freescale Semiconductor

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